2D/2D Black Phosphorus/Nickel Hydroxide Heterostructures for Promoting Oxygen Evolution via Electronic Structure Modulation and Surface Reconstruction (Adv. Energy Mater. 25/2022)

Electronic reconstruction in correlated electron heterostructures

Electronic phase behavior in correlated-electron systems is a fundamental problem of condensed matter physics. We argue here that the change in the phase behavior near the surface and interface, i.e., electronic reconstruction, is the fundamental issue of the correlated-electron surface or interface science. Beyond its importance to basic science, understanding of this behavior is crucial for p...

Heterostructures: Bio‐Inspired Leaf‐Mimicking Nanosheet/Nanotube Heterostructure as a Highly Efficient Oxygen Evolution Catalyst (Adv. Sci. 4/2015)

Phase-controllable synthesis of cobalt hydroxide for electrocatalytic oxygen evolution.

Identification of active sites for oxygen evolution reaction (OER) plays a key role in the design and fabrication of high-performance cobalt-based electrocatalysts. Herein, we report the synthesis of two types of two-dimensional monometallic cobalt hydroxide nanoplates in aqueous solution for OER: α-Co(OH)2 with both Co2+Td and Co2+Oh sites and β-Co(OH)2 with Co2+Oh sites. Electrochemical chara...

Metamaterials: Snapping Mechanical Metamaterials under Tension (Adv. Mater. 39/2015).

By exploiting snap-through instabilities, D. Pasini and co-workers design a damage-tolerant mechanical metamaterial that snaps sequentially under tension, thereby accommodating a very large deformation up to 150%. On page 5931, they describe how the nonlinear mechanical response of the metamaterial can be robustly programmed by tuning the architecture of its unit cell.

Electronic structure modulation for low-power switching

We report the transport characteristics of a novel transistor based on the electronic structure modulation of the channel. The gate voltage-controlled current modulation arises from the bandwidth manipulation of a midgap or a near-midgap state. We show that the transistor exhibits a gain and overcomes the 2.3 kBT/decade thermal limit in the inverse subthreshold slope where kB is the Boltzmann c...